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| TEMPFET(R) BTS 112A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 33 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 20 12 2.5 48 27 400 40 - 55 ... + 150 E 55/150/56 K/W 3.1 75 C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C Short circuit dissipation, Tj = - 55 ... + 150 C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 112A Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1.0 mA Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 C Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 10 V, ID = 7.5 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 7.5 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS 60 - 3.0 - 3.5 V VGS(th) 2.5 I DSS - - 0.1 10 1.0 100 A I GSS - - 10 2 0.12 100 4 0.15 nA A - RDS(on) gfs 3.0 5.7 360 160 50 15 30 40 55 - S pF - 480 250 90 25 45 55 75 ns Ciss Coss - Crss - - - - - Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t r Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t f Semiconductor Group 2 BTS 112A Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 24 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Holding current, VTS(off) = 5.0 V, Tj = 25 C Tj = 150 C Switching temperature VTS = 5.0 V Turn-off time VTS = 5.0 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD - - - - - 1.5 60 0.1 12 48 A V 1.8 ns - C - t rr - Q rr - VTS(on) - - 1.4 - - - 0.1 0.2 - - 1.5 10 V ITS(on) - - 10 600 0.5 0.3 mA IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff Semiconductor Group 3 BTS 112A Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol 1 Examples 2 - Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 C, before short circuit VDS VGS ISC PSC tSC(off) 15 6.8 27 400 20 30 5.0 11 330 20 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... +150C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C Semiconductor Group 4 BTS 112A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C Semiconductor Group 5 BTS 112A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 5 A, VGS = 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V Semiconductor Group 6 BTS 112A Continuous drain current ID = f (TC) Parameter: VGS - 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = - 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 112A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 112A Package Outlines TO 220 AB Standard Ordering Code C67078-S5014-A3 TO 220 AB SMD Version E 3045 Tape & reel E 3045 A Ordering Code C67078-S5014-A4 C67078-S5014-A5 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 13.5 2) 15.6 9 |
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